Seh America, Inc.

Aaron W Johnson

Rosemary T Nettleton

Robert L Faulconer

Aaron L LaBrie

Randall Spradlin

A method of growing a crystalline ingot having a <110> orientation, such as a dislocation-free (&ldquo;DF&rdquo;) crystalline ingot, is provided. The method of manufacture includes providing a liquidous melt. Next, a seed crystal having a <110> crystal direction is contacted with the surface of the melt. The seed crystal is then withdrawn from the melt to thereby grow a neck. According to one embodiment, the seed elevation rate is automatically modified during the withdrawing step to reduce the diameter of the neck to greater than about 2.5 mm. Thereafter, the seed elevation rate is manually modified to alternate the diameter of the neck between about 2 mm and about 2.5 mm to thereby shape the neck into a recurring hourglass configuration. The neck is then withdrawn from the melt to grow a crystalline ingot having a <110> crystal direction and a diameter of at least about 200 mm.

Method of growing large-diameter dislocation-free <110> crystalline ingots

Method of growing large-diameter dislocation-free<110> crystalline ingots

A crystal pulling apparatus is disclosed which employs the Czochralski method. The crystal pulling apparatus is operated while a containing a crucible of molten material, while maintaining the growing chamber under a controlled pressure of less than atmospheric. In the event of a vacuum pump unexpectedly ceasing operation, power to the heater is terminated, thus allowing the molten material to solidify. In such an event, a second vacuum pump can readily be attached to the growing chamber thus restoring pressure control, and allowing power to the heater to be restored.

Growing community of inventors

Vancouver, WA, United States of America

Aaron W Johnson