Praxair Technology, Inc.

Aaron Reinicker

Ashwini K Sinha

Douglas Charles Heiderman

Qiong Guo

Ce Ma

Atul M Athalye

Methods for selectively etching SiGe relative to Si are provided. Some of the methods incorporate formation of a passivation layer on a surface of the Si layer to enhance SiGe etchant selectivity and the use of interhalogen gases that preferentially etch the SiGe as opposed to the Si in the presence of the passivation layer. The methods can occur in a cyclic manner until the desired thickness of the SiGe layer is obtained.

Methods for gas phase selective etching of silicon-germanium layers

A novel method, composition and storage and delivery container for using antimony-containing dopant materials are provided. The composition is selected with sufficient vapor pressure to flow at a steady, sufficient and sustained flow rate into an arc chamber as part of an ion implant process. The antimony-containing material is represented by a non-carbon containing chemical formula, thereby reducing or eliminating the introduction of carbon-based deposits into the ion chamber. The composition is stored in a storage and delivery vessel under stable conditions, which includes a moisture-free environment that does not contain trace amounts of moisture. The storage and delivery container is specifically designed to allow delivery of high purity, vapor phase antimony-containing dopant material at a steady, sufficient and sustained flow rate.

Storage and delivery of antimony-containing materials to an ion implanter

A novel method and system for using certain tin compounds as dopant sources for ion implantation are provided. A suitable tin-containing dopant source material is selected based on certain attributes. Some of these attributes include stability at room temperature; sufficient vapor pressure to be delivered from its source supply to an ion chamber and, the ability to produce a suitable beam current for ion implantation to achieve the required implant Sn dosage.

Tin-containing dopant compositions, systems and methods for use in ion implantation systems

A novel method, composition and system for using antimony-containing dopant materials are provided. The composition is selected with sufficient vapor pressure to flow into an arc chamber as part of an ion implant process. The antimony-containing material is represented by a non-carbon containing chemical formula, thereby reducing or eliminating the introduction of carbon-based deposits into the ion chamber. The composition is stored in a storage and delivery vessel under stable conditions, which includes a moisture-free environment that does not contain trace amounts of moisture.

Antimony-containing materials for ion implantation

A novel method and system for using certain tin compounds as dopant sources for ion implantation are provided. A suitable tin-containing dopant source material is selected based on one or more certain attributes. Some of these attributes include stability at room temperature; sufficient vapor pressure to be delivered from its source supply to an ion chamber and, the ability to produce a suitable beam current for ion implantation to achieve the required implant Sn dosage. The dopant source is preferably delivered from a source supply that actuates under sub atmospheric conditions to enhance the safety and reliability during operation.

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Buffalo, NY, United States of America

Aaron Reinicker