Intel Corporation

Aaron Littlejohn

Oleg Golonzka

Christopher J Wiegand

Justin Brockman

Angeline Smith

Tofizur Rahman

Daniel Ouellette

Andrew Smith

James Pellegren

Juan G Alzate-Vinasco

Michael Robinson

Huiying Liu

Yu-Jin Chen

Tanmoy Pramanik

A memory device includes a first electrode, a second electrode and a magnetic tunnel junction (MTJ) between the first electrode and the second electrode. The MTJ includes a fixed magnet, a free magnet and a tunnel barrier between the fixed magnet and the free magnet. The MTJ further includes a conductive layer between the free magnet and the second electrode, the conductive layer having a metallic dopant, where the metallic dopant has a concentration that increase with distance from an interface between the free magnet and the conductive layer. A capping layer is between the conductive layer and the second electrode.

Magnetic memory devices and methods of fabrication

A memory device includes a first electrode, a conductive layer including iridium above the first electrode, a magnetic junction on the conductive layer and a second electrode above the magnetic junction. The magnetic junction includes a magnetic structure including a first magnetic layer including cobalt, a non-magnetic layer including platinum or tungsten on the first magnetic layer and a second magnetic layer including cobalt on the non-magnetic layer. The magnetic junction further includes an anti-ferromagnetic layer on the magnet structure, a fixed magnet above the anti-ferromagnetic layer, a free magnet above the fixed magnet and a tunnel barrier between the fixed magnet and the free magnet.

Magnetic memory devices with enhanced tunnel magnetoresistance ratio (TMR) and methods of fabrication

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Portland, OR, United States of America

Aaron Littlejohn