Texas Instruments Corporation

Aaron L Frank

David Gonzalez, Jr

Deepak Arabagatte Ramappa

Hamid Safiri

John DeGenova

Srinavas Raghavan

Mark R Visokay

Clint Montgomery

Srinivas Raghavan

A multi-level DAC includes first and second level resistor ladders, and a dual-switch ladder interconnect reduces DNL at tap-point transitions between first-level ladder resistors. For each first level resistor N, the switch-interconnect network includes dual (first/second) switches connectable to a resistor-top node NT, and dual (third/fourth) switches selectively connectable to a resistor-bottom node NB. The first switch is operable to connect NT to a top tap switch operable to select NT as a top tap point, and the fourth interconnect switch is operable to connect NB to a bottom tap switch operable to select NB as a bottom tap point. The first and fourth switches are connected, forming an outer loop that includes top and bottom tap points. The second switch connects to a top second-level resistor RT, and the third switch connects to a bottom second-level resistor RB, forming an inner loop that includes the series-connected second-level resistors.

Multi-level ladder DAC with interconnect between ladder nodes

A phase look loop (PLL) device has a dynamic lock range that is based on a temperature measured during a calibration process. The PLL device includes a calibration circuit configured to receive a temperature reading corresponding to a junction temperature of the PLL device during the calibration process. Based on this temperature reading, the calibration circuit initiates a preset procedure that presets a control voltage of a voltage control oscillator in the PLL device. The preset procedure implements a calibration function defined by a slope with a numerator component and a denominator component. The numerator component corresponds to a range of the control voltage, whereas the denominator component corresponds to a range of ambient temperatures within which the PLL device operates.

Phase lock loop with dynamic lock ranges

One embodiment relates to a method of fabricating an integrated circuit. In the method, p-type polysilicon is provided over a semiconductor body, where the p-type polysilicon has a first depth as measured from a top surface of the p-type polysilicon. An n-type dopant is implanted into the p-type polysilicon to form a counter-doped layer at the top-surface of the p-type polysilicon, where the counter-doped layer has a second depth that is less than the first depth. A catalyst metal is provided that associates with the counter-doped layer to form a catalytic surface. A metal is deposited over the catalytic surface. A thermal process is performed that reacts the metal with the p-type polysilicon in the presence of the catalytic surface to form a metal silicide. Other methods and devices are also disclosed.

Methods for full gate silicidation of metal gate structures

The present invention provides a system for removing organic contaminants () from a copper seed layer that has been deposited on a semiconductor substrate (). The present invention provides a housing () to enclose the semiconductor substrate within. An ultraviolet radiation source () is disposed within the housing. A treatment medium () is also provided within the housing. The semiconductor substrate is enclosed within the housing and exposed to the treatment medium. The ultraviolet radiation source exposes the semiconductor substrate to ultraviolet radiation, desorbing the contaminants from the seed layer.

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Murphy, TX, United States of America

Aaron L Frank