Rockley Photonics Limited

University of Southampton

Chamartin Laboratories LLC

California Institute of Technology

Apple Inc.

Aaron John Zilkie

Guomin Yu

Andrew George Rickman

Hooman Abediasl

Haydn Frederick Jones

Yi Zhang

Andrea Trita

Pradeep Srinivasan

Thomas Pierre Schrans

Damiana Lerose

Amit Singh Nagra

Dong Yoon Oh

Gerald Cois Byrd

Adam C Scofield

Jeffrey B Driscoll

Alexander Gondarenko

Cristiano Dalvi

Sean Merritt

Alfredo Bismuto

Philip Perea

Frank Peters

David John Thomson

Abu Thomas

Richard Grote

Hua Yang

Mohamad Dernaika

Ludovic Caro

Roozbeh Parsa

Thomas Schrans

Adam Scofield

Azita Emami

Yi-Kuei Ryan Wu

Jacob Levy

David Arlo Nelson

Nathan Farrington

Karlheinz Muth

Albert Benzoni

Aaron L Birkbeck

Jeffrey Driscoll

Arian Hashemi Talkhooncheh

Kate LeeAnn Bechtel

Kyle R Rick

Vivek Raghunathan

Omar James Bchir

Renata Melamud Berger

Chia-Te Chou

Evan Einbender Aamodt

Kevin Kinichi Masuda

Frederic Yannick Gardes

Breanna Stachowski

Benjamin Ver Steeg

Henri Nykänen

MohammadSadegh Faraji-Dana

Farzaneh Afshinmanesh

Lok Man Chu

Arin Abed

Weiwei Zhang

Alexander Fast

Yi-kuei Ryan Wu

Erman Timurdogan

Vafa Jamali

James Dongyoon Oh

Suresh Chengalva

Craig Gadd

Christopher Alan Harris

Patrick John Castagna

Todd Andrew Newhouse

Vishwas Kulkarni

Dhiraj Kumar

Iain Anteney

Charles Su-Chang Tsai

Adrian Williamson Bahani

Jennifer Lynn Corso

Ferdyan Lesmana

Goumin Yu

An optical sensing module suitable for wearable devices, the optical sensing module comprising: a silicon or silicon nitride transmitter photonic integrated circuit (PIC), the transmitter PIC comprising: a plurality of lasers, each laser of the plurality of lasers operating at a wavelength that is different from the wavelength of the others; an optical manipulation region, the optical manipulation region comprising one or more of: an optical modulator, optical multiplexer (MUX); and additional optical manipulation elements; and one or more optical outputs for light originating from the plurality of lasers.

Optical sensing module

A method of transfer printing. The method comprising: providing a precursor photonic device, comprising a substrate and a bonding region, wherein the precursor photonic device includes one or more alignment marks located in or adjacent to the bonding region; providing a transfer die, said transfer die including one or more alignment marks; aligning the one or more alignment marks of the precursor photonic device with the one or more alignment marks of the transfer die; and bonding at least a part of the transfer die to the bonding region.

Method for III-V/silicon hybrid integration

An optoelectronic module. In some embodiments, the optoelectronic module includes a substrate; a digital integrated circuit, on an upper surface of the substrate; a photonic integrated circuit, secured in a pocket of the substrate, the pocket being in the upper surface of the substrate; and an analog integrated circuit, on the photonic integrated circuit.

Optoelectronic module package

A phase shift keying modulator. The modulator comprises: a plurality of silicon waveguides provided in a device layer of a silicon-on-insulator platform, the silicon-on-insulator platform including one or more cavities; one or more III-V semiconductor based devices located within the one or more cavities of the silicon-on-insulator platform, each III-V semiconductor-based device including a III-V semiconductor based waveguide which is coupled at an input end to one of the plurality of silicon waveguides and coupled at an output end to another of the plurality of silicon waveguides, each III-V semiconductor based waveguide comprising an active phase modulating portion; and one or more contacts in electrical contact with each active phase modulating portion, such that the phase shift keying modulator is operable to modulate the phase of an optical wave passing through each active phase modulating portion.

Phase shift keying modulator

A wearable device. In some embodiments, the wearable device includes: a sensing module; and a strap attached to the sensing module, the wearable device being configured to be worn by a user, with a lower surface of the sensing module in contact with the user, the strap extending over an upper surface of the sensing module.

Wearable device

Disclosed herein is an integrated photonics device including a frequency stabilization subsystem for monitoring and/or adjusting the wavelength of light emitted by one or more light sources. The device can include one or more selectors that can combine, select, and/or filter light along one or more light paths, which can include light emitted by a plurality of light sources. Example selectors may include, but are not limited to, an arrayed waveguide grating (AWG), a ring resonator, a plurality of distributed Bragg reflectors (DBRs), a plurality of filters, and the like. Output light paths from the selector(s) can be input into one or more detector(s). The detector(s) can receive the light along the light paths and can generate one or more signals as output signal(s) from the frequency stabilization subsystem. A controller can monitor the wavelength and can adjust or generate control signal(s) for the one or more light sources to lock the monitored wavelength to a target wavelength (or within a targeted range of wavelengths).

Systems and methods for wavelength locking in optical sensing systems

A stamp suitable for use in a micro-transfer printing process. The stamp comprises: a carrier layer; a plurality of stamp base sections, wherein: each stamp base section is attached on a first surface to the carrier layer, and separated from each adjacent stamp base section by a gap; and each stamp base section includes one or more stamping posts, for adhering to a source coupon, each stamping post extending from a second surface of its respective stamp base section.

Stamp for micro-transfer printing

A multi-channel laser source, including: a bus waveguide coupled, at an output end of the bus waveguide, to an output of the multi-channel laser source; a first semiconductor optical amplifier; a first back mirror; a first wavelength-dependent coupler, having a first resonant wavelength, on the bus waveguide; a second semiconductor optical amplifier; a second back mirror; and a second wavelength-dependent coupler, on the bus waveguide, having a second resonant wavelength, different from the first resonant wavelength. In some embodiments the first semiconductor optical amplifier is coupled to the bus waveguide by the first wavelength-dependent coupler, which is nearer to the output end of the bus waveguide than the second wavelength-dependent coupler, the second semiconductor optical amplifier is coupled to the bus waveguide by the second wavelength-dependent coupler, and the first wavelength-dependent coupler is configured to transmit light, at the second resonant wavelength, along the bus waveguide.

Broadband arbitrary wavelength multichannel laser source

An optical modulator. The optical modulator comprising: a micro-ring resonator; and a bus waveguide, including an input waveguide region, an output waveguide region, and a coupling waveguide region optically coupled to the micro-ring resonator and located between the input waveguide region and the output waveguide region. The micro-ring resonator includes a modulation region, the modulation region being formed of a silicon portion and a III-V semiconductor portion separated by a crystalline rare earth oxide dielectric layer.

Optical modulator

An optoelectronic device. The device comprises: a silicon-on-insulator platform, including a silicon waveguide, formed in a silicon device layer, a silicon substrate, and a cavity; a III-V semiconductor based device, located within the cavity of the silicon-on-insulator platform and containing a III-V semiconductor based waveguide which is coupled to the silicon waveguide. A region of a bed of the cavity, located between the III-V semiconductor based device and the substrate, includes a patterned surface, which is configured to interact with an optical signal within the III-V semiconductor based waveguide of the III-V semiconductor based device.

Optoelectronic device and method of manufacture thereof

An optoelectronic device. The optoelectronic device comprising: a silicon-on-insulator platform, including: a silicon waveguide located within a silicon device layer of the platform, a substrate, and an insulator layer between the substrate and the silicon device layer; and a III-V semiconductor based device, located within a cavity of the silicon-on-insulator platform and including a III-V semiconductor based waveguide, coupled to the silicon waveguide; wherein the III-V semiconductor based device includes a heater and one or more electrical traces, connected to the heater, wherein the one or more electrical traces extend from the III-V semiconductor based device to respective contact pads on the silicon-on-insulator platform.

Integrated III-V / silicon optoelectronic device and method of manufacture thereof

An optical out-coupler unit for out-coupling light from a waveguide, comprising a substrate having a planar top surface, a waveguide arranged on the top surface of the substrate and having a facet, a reflective surface, wherein the reflective surface is arranged spaced apart from the facet and opposing the facet, wherein the reflective surface is inclined with respect to a normal to the top surface of the substrate by more than 45°. The optical out-coupler may be part of a photonic integrated chip (PIC).

Optical out-coupler unit for out-coupling light from a waveguide

An optoelectronic device. The optoelectronic device including: a silicon platform, including a silicon waveguide and a cavity, wherein a bed of the cavity is provided at least in part by a buried oxide layer; a III-V semiconductor-based optoelectronic component, bonded to a bed of the cavity of the silicon platform; and a bridge-waveguide, located between the silicon waveguide and the III-V semiconductor-based optoelectronic component.

Optoelectronic device

A method of manufacturing an optoelectronic device. The manufactured device includes a photonic component coupled to a waveguide. The method comprising: providing a device coupon, the device coupon including the photonic component; providing a silicon platform, the silicon platform comprising a cavity within which is a bonding surface for the device coupon; transfer printing the device coupon onto the cavity, such that a surface of the device coupon directly abuts the bonding surface and at least one channel is present between the device coupon and a sidewall of the cavity; and filling the at least one channel with a filling material via a spin-coating process, to form a bridge coupling the III-V semiconductor based photonic component to the silicon waveguide.

A waveguide platform and method of fabricating a waveguide platform on a silicon wafer; the method comprising: providing a wafer having a layer of crystalline silicon; lithographically defining a first region of the top layer; electrochemically etching the waveguide platform to create porous silicon at the lithographically defined first region; epitaxially growing crystalline silicon on top of the porous silicon to create a first upper crystalline layer with a first buried porous silicon region underneath; wherein the first buried porous silicon region defines a taper between a first waveguide region of crystalline silicon having a first depth and a second waveguide region of crystalline silicon having a second depth which is smaller than the first depth.

Waveguide platform

Growing community of inventors

Pasadena, CA, United States of America

Aaron John Zilkie