Sandia Corporation

Aaron Gin

Michael Joseph Cich

Jin K Kim

Malcolm Carroll

Erik W Young

Phillip F Marsh

An infrared focal plane array (FPA) is disclosed which utilizes a strained-layer superlattice (SLS) formed of alternating layers of InAs and InGaSb with 0&#x2266;x&#x2266;0.5 epitaxially grown on a GaSb substrate. The FPA avoids the use of a mesa structure to isolate each photodetector element and instead uses impurity-doped regions formed in or about each photodetector for electrical isolation. This results in a substantially-planar structure in which the SLS is unbroken across the entire width of a 2-D array of the photodetector elements which are capped with an epitaxially-grown passivation layer to reduce or eliminate surface recombination. The FPA has applications for use in the wavelength range of 3-25 &#x3bc;m.

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Albuquerque, NM, United States of America

Aaron Gin