Lucent Technologies Inc.

Aaron Eugene Bond

Mindaugas Fernand Dautartas

George John Przybylek

Abdallah Ougazzaden

Gleb E Shtengel

A semiconductor waveguide device and method for forming the same provide an InAlAs film as an etch stop layer. The InAlAs film does not etch in the CH /H etch chemistry used to produce the device using reactive ion etching techniques. The etching process etches the waveguide layer and cladding layer or layers formed above the InAlAs layer, and exposes the InAlAs etch stop film to produce a waveguide device having desired physical characteristics.

InA1As etch stop layer for precise semiconductor waveguide fabrication

An arrangement for providing attachment and alignment between an array of surface emitting lasers and an array of optical fibers utilizes a first substrate for supporting the laser array and a second substrate for supporting the fibers. The second substrate is formed to including a plurality of apertures that are disposed to self-align with the laser array upon attachment. Alignment fiducials may be formed on both substrates to facilitate the alignment.

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Macungie, PA, United States of America

Aaron Eugene Bond