International Business Machines Corporation

Aaron Daniel Fry

Timothy J Fisher

Roman Alexander Pletka

Nikolas Ioannou

Sasa Tomic

Nikolaos Papandreou

Charalampos Pozidis

Charles John Camp

Radu Ioan Stoica

Andrew Dale Walls

Ioannis Koltsidas

Lincoln T Simmons

Thomas P Parnell

Adalberto Guillermo Yanes

Jason Szecheong Ma

Kevin E Sallese

Charles A Keller

Van Huynh

Gary A Tressler

Franck Excoffier

David A Pierce

Adam C Chunn

Razik S Ahmed

Matthew R Orr

Ashwitha Krishna Kumar

Jenny L Brown

Thomas Mittelholzer

M Dean Sciacca

Samuel K Ingram

Matthew S Reuter

John Carrington Cates

Matt Reuter

Austin Eberle

A non-volatile memory includes physical blocks each including a respective plurality of cells, where each cell is capable of storing multiple bits of data. A controller maintains dynamically resizable pools of physical blocks, including at least a low-density pool in which cells are configured to store fewer bits and a high-density pool in which cells are configured to store more bits. The controller repeatedly dynamically resizes the low-density and the high-density pools based on write utilization of the non-volatile memory.

Storage pool resizing to meet memory endurance targets

A technique for writing data to pages in a QLC block of a QLC NAND flash memory device, where the device comprises a plurality of SLC pages organized in SLC blocks and a plurality of QLC pages organized in QLC blocks. The technique comprises storing received data in SLC pages, dividing equally a QLC block in a predefined number of sub-blocks according to a corresponding QLC page health status of the pages of the QLC block. Upon determining that SLC pages are to be copied from SLC pages to QLC pages, copying device-internal the respective SLC pages to the sub-blocks of the QLC block using device-internal cache registers, where the copying is based on an error-count aware scheme.

Write and retire pages in QLC NAND blocks

A non-volatile memory includes physical blocks each including a respective plurality of cells, where each cell is capable of storing multiple bits of data. A controller maintains dynamically resizable pools of physical blocks, including at least a low-density pool in which cells are configured to store fewer bits and a high-density pool in which cells are configured to store more bits. The controller determines whe ther total utilization of physical blocks is less than a low-density pool utilization threshold above which the high-density pool of physical blocks is utilized for storing host write data and additionally identifies cold in-use logical block address (LBA) regions having low total access frequencies. Based on determining the total utilization of physical blocks is less than the low-density pool utilization threshold, the controller performs data placement of data from the cold in-use LBA regions in blocks of the high-density pool.

Proactive data placement in high density storage by a hybrid non-volatile storage controller

Threshold voltage shift values, or TVS values, are calibrated for a non-volatile memory unit including strings of memory cells organized into memory pages, the memory pages being organized into blocks. The calibration involves a read operation to read a given page of the memory pages, based on given one or more TVS values for the given page. In response to a read failure of the read operation, the calibration determines one or more corrected TVS values based on one or more reference TVS values of one or more reference pages of the memory pages. The calibration subsequently performs a read operation to read the given page based on the one or more corrected TVS values. This calibration exploits TVS values of reference pages to determine corrected TVS values of the failing page, instead of finding appropriate TVS values by repeatedly re-reading the failing page.

Calibration of threshold voltage shift values

Provided are a storage device, system, and method for throttling host writes in a host buffer to a storage device. The storage device is coupled to a host system having a host buffer that includes reads and writes to pages of the storage device. Garbage collection consolidates valid data from pages in the storage device to fewer pages. A determination is made as to whether a processing measurement at the storage device satisfies a threshold. A timer value is set to a positive value in response to determining that the processing measurement satisfies the threshold. The timer is started to run for the timer value. Writes from the host buffer are blocked while the timer is running. Writes remain in the host buffer while the timer is running. A write is accepted from the host buffer to process in response to expiration of the timer.

Throttling host writes in a host buffer to a storage device

A non-volatile memory includes a plurality of cells each individually capable of storing multiple bits of data including bits of multiple physical pages. A controller of the non-volatile memory issues a command to perform a programming pass for a physical page among the multiple physical pages. The controller determines whether or not the programming pass took less than a minimum threshold time and no program fail status indication was received. Based on determining the programming pass took less than a minimum threshold time and no program fail status indication was received, the controller detects an under-programming error and performs mitigation for the detected under-programming error.

Detecting and managing under-program failures in non-volatile memory

A controller of a non-volatile memory detects errors in data read from a particular physical page of the non-volatile memory. Based on detecting the errors, the controller performs a read voltage threshold calibration for a page group including the particular physical page and a multiple other physical pages. Performing the read voltage threshold calibration includes calibrating read voltage thresholds based on only the particular physical page of the page group. After the controller performs the read voltage threshold calibration, the controller optionally validates the calibration. Validating the calibration includes determining whether bit error rates diverge within the page group and, if so, mitigating the divergence. Mitigating the divergence includes relocating data from the page group to another block of the non-volatile memory.

Page group read voltage threshold calibration

A method, system, and computer program product are disclosed. The method includes receiving a write request to a system and calculating, based on operating parameters of the system, a total processing time associated with servicing the write request in the system. The method also includes determining an actual time taken to store data specified in the write request and, when the actual time is less than the total processing time, delaying sending a completion message for the write request to an I/O interface.

Latency in data storage systems

A non-volatile memory includes a plurality of physical blocks each including a respective plurality of cells, where each cell is individually capable of storing multiple bits of data. A controller for the non-volatile memory maintains dynamically resizable pools of physical blocks, including at least a low-density pool of physical blocks in which cells are configured to store a fewer number of bits and a high-density pool of physical blocks in which cells are configured to store a greater number of bits. The controller detects an imbalance in utilization between the low-density and high-density pools and, based on detection of the pool imbalance, restricts data placement in the low-density pool, enables garbage collection from the low-density pool back into the low-density pool to compact the low-density pool, and re-enables data placement to the low-density pool based on availability of a threshold number of free physical blocks in the low-density pool.

Balancing utilization of memory pools of physical blocks of differing storage densities

A computer-implemented method, according to one embodiment, includes: maintaining a first subset of the plurality of blocks in a first pool, where the blocks maintained in the first pool are configured in SLC mode. A second subset of the plurality of blocks is maintained in a second pool, where the blocks maintained in the second pool are configured in multi-bit-per-cell mode. A current I/O rate for the memory is identified during runtime, and a determination is made as to whether the current I/O rate is outside a first range. In response to determining that the current I/O rate is not outside the first range, the blocks maintained in the first pool are used to satisfy incoming host writes. Moreover, in response to determining that the current I/O rate is outside the first range, the blocks maintained in the second pool are used to satisfy incoming host writes.

Workload based relief valve activation for hybrid controller architectures

A computer-implemented method, according to one approach, includes: determining a current read heat value of each logical page which corresponds to write requests that have accumulated in a destage buffer. Each of the write requests is assigned to a respective write queue based on the current read heat value of each logical page which corresponds to the write requests. Moreover, each of the write queues correspond to a different page stripe which includes physical pages, the physical pages included in each of the respective page stripes being of a same type. Other systems, methods, and computer program products are described in additional approaches.

Data placement in write cache architecture supporting read heat data separation

A RAID controller periodically collects an indication of a current compression ratio achieved by each of a plurality of storage devices within the RAID. The RAID controller determines a placement of data and the parity information within at least one of the plurality of storage devices according to at least one of a plurality of factors associated with the current compression ratio. The RAID controller writes the data and the parity information to the at least one of the plurality of storage devices according to the determined placement.

Adaptive data and parity placement using compression ratios of storage devices

A computer-implemented method, according to one approach, is for calibrating read voltages associated with a block of memory having more than one word-line therein. The computer-implemented method includes: for each of the word-lines in the block: calculating an absolute shift value for a reference read voltage associated with the given word-line. A relative shift value is also determined for each of the remaining read voltages associated with the given word-line, and the relative shift values are determined with respect to the reference read voltage. Moreover, each of the read voltages associated with the given word-line are adjusted using the absolute shift value and each of the respective relative shift values.

Calculating corrective read voltage offsets in non-volatile random access memory

A computer-implemented method, according to one embodiment, includes: determining a current operating state of a block of memory. The block includes more than one type of page therein, and at least one read voltage is associated with each of the page types. The current operating state of the block is further used to produce a hybrid calibration scheme for the block which identifies a first subset of the read voltages, and a second subset of the read voltages. The read voltages in the second subset are further organized in one or more groupings. A unique read voltage offset value is calculated for each of the read voltages in the first subset, and a common read voltage offset value is also calculated for each grouping of read voltages in the second subset.

Hybrid read voltage calibration in non-volatile random access memory

A computer-implemented method, according to one embodiment, includes: determining whether a number of blocks included in a first ready-to-use (RTU) queue is in a first range of the first RTU queue. In response to determining that the number of blocks included in the first RTU queue is in the first range, a determination is made as to whether a number of blocks included in a second RTU queue is in a second range of the second RTU queue. Moreover, in response to determining that the number of blocks included in the second RTU queue is not in the second range, valid data is relocated from one of the blocks in a first pool which corresponds to the first RTU queue. The block in the first pool is erased, and transferred from the first pool to the second RTU queue which corresponds to a second pool.

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Richmond, TX, United States of America

Aaron Daniel Fry