International Business Machines Corporation

Globalfoundries Inc.

Purdue Research Foundation

Other

Aaron Daniel Franklin

Joshua T Smith

George Stojan Tulevski

Shu-Jen Han

Damon B Farmer

Zhihong Chen

Ali Afzali-Ardakani

Christos Dimitrios Dimitrakopoulos

James Bowler Hannon

Timothy Scott Fisher

Paul Michael Solomon

Qing Cao

Hiroyuki Miyazoe

Robert L Bruce

Yann A Astier

Jingwei Bai

Siyuranga O Koswatta

Satyavolu S Papa Rao

Timothy David Sands

Satoshi Oida

Sataoshi Oida

Katherine Lynn Saenger

Ageeth Anke Bol

David B Janes

Jonathan Clay Claussen

D Marshall Porterfield

Matthew Ralph Maschmann

A metal structure including a first metal end region, a second metal end region, and an intermediate region between the first metal end region and the second metal end region, wherein the intermediate region comprises a metal nanostructure having a plurality of pores.

Nanoporous structures by reactive ion etching

Embodiments of the invention include a method of fabrication of a semiconductor structure. The method of fabrication includes: Forming a trench in a first dielectric material down to a first conductive material of a bottom gate. A sidewall of the trench contacts a top surface of the first conductive material. Depositing a second conductive material on the sidewall of the trench, which forms an electrical connection with the first conductive material. Depositing a second dielectric material in the trench, and on the second conductive material. Depositing a gate dielectric material on the second conductive material and the dielectric materials. Forming a channel material on the gate dielectric material. Depositing another conductive material on the channel material and portions of the gate dielectric material to form a source terminal and a drain terminal.

Semiconductor device with ballistic gate length structure

In an aspect of the present invention, a graphene field-effect transistor (GFET) structure is formed. The GFET structure comprises a wider portion and a narrow extension portion extending from the wider portion that includes one or more graphene layers edge contacted to source and drain contacts, wherein the source and drain contacts are self-aligned to the one or more graphene layers.

Stacked graphene field-effect transistor

A carbon nanotube semiconductor device includes at least one carbon nanotube disposed on an insulator portion of a substrate. The at least one carbon nanotube includes a non-doped channel portion interposed between a first doped source/drain portion and a second doped source/drain portion. A first source/drain contact stack is disposed on the first doped source/drain portion and an opposing second source/drain contact stack is disposed on the second doped source/drain portion. A replacement metal gate stack is interposed between the first and second source/drain contact stacks, and on the at least one carbon nanotube. The first and second doped source/drain portions are each vertically aligned with an inner edge of the first and second contact stacks, respectively.

Self-aligned carbon nanotube transistor including source/drain extensions and top gate

In one embodiment, SWNTs are synthesized from an embedded catalyst in a modified porous anodic alumina (PAA) template. Pd is electrodeposited into the template to form nanowires that grow from an underlying conductive layer beneath the PAA and extend to the initiation sites of the SWNTs within each pore. Individual vertical channels of SWNTs are created, each with a vertical Pd nanowire back contact. Further Pd deposition results in annular Pd nanoparticles that form on portions of SWNTs extending onto the PAA surface. Two-terminal electrical characteristics produce linear I-V relationships, indicating ohmic contact in the devices.

Contact metallization of carbon nanotubes

An electronic device comprises an insulator, a local first gate embedded in the insulator with a top surface of the first gate being substantially coplanar with a surface of the insulator, a first dielectric layer formed over the first gate and insulator, and a channel. The channel comprises a bilayer graphene layer formed on the first dielectric layer. The first dielectric layer provides a substantially flat surface on which the channel is formed. A second dielectric layer formed over the bilayer graphene layer and a local second gate formed over the second dielectric layer. Each of the local first and second gates is capacitively coupled to the channel of the bilayer graphene layer. The local first and second gates form a first pair of gates to locally control a first portion of the bilayer graphene layer.

Graphene devices with local dual gates

A technique is provided for forming a nanodevice for sequencing. A bottom metal contact is disposed at a location in an insulator that is on a substrate. A nonconducting material is disposed on top of the bottom metal contact and the insulator. A carbon nanotube is disposed on top of the nonconducting material. Top metal contacts are disposed on top of the carbon nanotube at the location of the bottom metal contact, where the top metal contacts are formed at opposing ends of the carbon nanotube at the location. The carbon nanotube is suspended over the bottom metal contact at the location, by etching away the nonconducting material under the carbon nanotube to expose the bottom metal contact as a bottom of a trench, while leaving the nonconducting material immediately under the top metal contacts as walls of the trench.

DNA sequencing using a suspended carbon nanotube

Embodiments of the invention include a method of fabrication and a semiconductor structure. The method of fabrication includes depositing a first dielectric material on a substrate, and forming a bottom gate including filling a first opening in the first dielectric layer with a first conductive material. Next, depositing a second dielectric material, and forming a trench in the second dielectric material down to the first conductive material. Next, depositing a second conductive material on the sidewall of the trench forming an electrical connection between the first conductive material and the second conductive material, depositing a third dielectric material in the trench, and removing excess material not in the trench. Next, depositing a gate dielectric layer, and forming a channel layer of carbon nanotubes on the gate dielectric layer. Lastly, depositing a third conductive material on the channel layer forming source and drain terminals.

A method of forming an electrode is disclosed. A carbon nanotube is deposited on a substrate. A section of the carbon nanotube is removed to form at least one exposed end defining a first gap. A metal is deposited at the at least one exposed end to form the electrode that defines a second gap.

Device for electrical characterization of molecules using CNT-nanoparticle-molecule-nanoparticle-CNT structure

A method for forming porous metal structures and the resulting structure may include forming a metal structure above a substrate. A masking layer may be formed above the metal structure, and then etched using a reactive ion etching process with a mask etchant and a metal etchant. Etching the masking layer may result in the formation of a plurality of pores in the metal structure. In some embodiments, the metal structure may include a first end region, a second end region, and an intermediate region. Before etching the masking layer, a protective layer may be formed above the first end region and the second end region, so that the plurality of pores is contained within the intermediate region. In some embodiments, the intermediate metal region may be a nanostructure such as a nanowire.

A carbon nanotube field-effect transistor is disclosed. The carbon nanotube field-effect transistor includes a first carbon nanotube film, a first gate layer coupled to the first carbon nanotube film and a second carbon nanotube film coupled to the first gate layer opposite the first gate layer. The first gate layer is configured to influence an electric field within the first carbon nanotube film as well as to influence an electric field of the second carbon nanotube film. At least one of a source contact and a drain contact are coupled to the first and second carbon nanotube film and are separated from the first gate layer by an underlap region.

Growing community of inventors

Croton on Hudson, NY, United States of America

Aaron Daniel Franklin