Lam Research Corporation

Aaron Bingham

Sunil Kapoor

Tuan Anh Nguyen

Karl Frederick Leeser

Ramesh Chandrasekharan

Pulkit Agarwal

David Michael French

Yaswanth Rangineni

Eller Y Juco

Ravi Kumar

Jacob Lee Hiester

Michael Philip Roberts

Brett Herzig

David Alan Metz

Brian Knight

Adrien Lavoie

Patrick A Van Cleemput

Jennifer Leigh Petraglia

Ashish Saurabh

A system to process a semiconductor substrate includes a substrate support assembly configured to support the semiconductor substrate. The substrate support assembly includes M resistive heaters respectively arranged in M zones in a layer of the substrate support assembly, where M is an integer greater than 1. The layer is adjacent to the semiconductor substrate. The substrate support assembly includes N temperature sensors arranged at N locations in the layer, where N is an integer greater than 1 and less than or equal to M. The system further includes a controller configured to control one or more of the M resistive heaters based on a temperature sensed by one of the N temperature sensors and average temperatures of one or more of the M zones.

Temperature control of a multi-zone pedestal

A circuit tuning radio frequency (RF) power. The circuit includes a low to mid frequency (LF/HF) tuning circuit including a variable LF/MF capacitor coupled in series with an LF/MF inductor. The LF/MF tuning circuit is coupled between ground and a common node configured to receive an RF input. The circuit includes a high frequency (HF) tuning circuit coupled in parallel to the LF/MF tuning circuit between ground and the common node. The HF tuning circuit includes a variable HF capacitor coupled in series with an HF inductor. Cross parallel isolation occurs between the LF/MF inductor of the LF/MF tuning circuit and the HF inductor of the HF tuning circuit when adjusting the variable LF/MF capacitor or variable HF capacitor.

Modular recipe controlled calibration (MRCC) apparatus used to balance plasma in multiple station system

A substrate processing system configured to perform a deposition process on a substrate includes a substrate support including a plurality of zones and a plurality of resistive heaters arranged throughout the plurality of zones. The plurality of resistive heaters includes separately-controllable resistive heaters arranged in respective ones of the plurality of zones. A controller is configured to, during the deposition process, control the plurality of resistive heaters to selectively adjust temperatures within the plurality of zones.

Multi zone substrate support for ALD film property correction and tunability

A plasma processing system having a plurality of stations is provided. Each station has a substrate support and a showerhead for supplying process gases. A radio frequency (RF) power supply and a distribution system is provided, where the distribution system is coupled to the RF power supply. A plurality of voltage probes is provided. Each of the plurality of voltage probes is connected in-line between the distribution system and each showerhead of each of the stations. A controller is configured to receive sensed voltage values from each of the plurality of voltage probes and compare the sensed voltage values against a plurality of voltage check bands. Each voltage check band is predefined for a process operation, and the controller is configured to generate an alert when the comparing detects that a sensed voltage value is outside of a voltage check band. The alert is configured to identify a type of fault based on the voltage check band and identify a specific one of the plurality of stations having said type of fault.

Fault detection using showerhead voltage variation

Methods for controlling glow discharge in a plasma chamber are disclosed. One method includes connecting a radio frequency (RF) generator to a top electrode of a chamber, the chamber having chamber walls coupled to ground and connecting the RF generator to a bottom electrode of the chamber. Identifying a process operation of deposition to be performed in the chamber and setting an RF signal from the RF generator to be supplied to the top electrode at a first phase. And, setting the RF signal from the RF generator to be supplied to the bottom electrode at a second phase. The first phase and the second phase being adjustable to a phase difference to cause the plasma glow discharge to be controllably positioned within the chamber based on the phase difference.

Methods for controlling plasma glow discharge in a plasma chamber

A method includes providing radio frequency (RF) power from an RF power supply to a showerhead of a plasma processing system running a process operation on a substrate disposed in the plasma processing system. The method senses a voltage the showerhead using a voltage probe that is connected in-line between the RF power supply and the showerhead. The sensing of the voltage produces voltage values during the running of the process operation. The method includes comparing the voltage values against a voltage check band that is predefined for the process operation being run. The comparing is configured to detect when the voltage values are outside of the voltage check band. The method generates an alert when the comparing detects that the voltage values are outside of the voltage check band. The alert identifies a type of fault based on the voltage check band that was predefined for the process operation.

Growing community of inventors

Newberg, OR, United States of America

Aaron Bingham