Seoul Viosys Co., Ltd.

A Ram Cha Lee

Hwa Mok Kim

Chang Suk Han

Mi So Ko

Hyo Shik Choi

Ki Bum Nam

Jeong Hun Heo

Joo Won Choi

Yu Dae Han

Choong Min Lee

Su Jin Shin

Daewoong Suh

Dae Woong Suh

A UV light emitting device includes: an n-type contact layer including an AlGaN layer or an AlInGaN layer; a p-type contact layer including a AlGaN layer or an AlInGaN layer; and an active layer of a multi-quantum well structure placed between the n-type contact layer and the p-type contact layer. The active area of the multi-quantum well structure includes barrier layers and well layers. The well layers include electrons and holes present according to probability distributions thereof. The barrier layers are formed of AlInGaN or AlGaN and have an Al content of 10% to 30%. At least one of the barrier layers disposed between the well layers has a smaller thickness than of the well layers and at least one of the barrier layers placed between the well layers has a thickness and a band gap preventing electrons and holes injected into and confined in a well layer adjacent to the barrier layer from spreading into another adjacent well layer.

UV light emitting device

Disclosed is a near UV light emitting device. The light emitting device includes an n-type contact layer, a p-type contact layer, an active area of a multi-quantum well structure disposed between the n-type contact layer and the p-type contact layer, and at least one electron control layer disposed between the n-type contact layer and the active area. Each of the n-type contact layer and the p-type contact layer includes an AlInGaN or AlGaN layer, and the electron control layer is formed of AlInGaN or AlGaN. In addition, the electron control layer contains a larger amount of Al than adjacent layers to obstruct flow of electrons moving into the active area. Accordingly, electron mobility is deteriorated, thereby improving recombination rate of electrons and holes in the active area.

Near UV light emitting device

The present invention relates to a method for separating epitaxial layers and growth substrates, and to a semiconductor device using same. According to the present invention, a semiconductor device is provided which comprises a supporting substrate and a plurality of semiconductor layers provided on the supporting substrate, wherein the uppermost layer of the semiconductor layers has a surface of non-uniform roughness.

Method for separating epitaxial layers from growth substrates, and semiconductor device using same

Disclosed are a substrate regeneration method and a regenerated substrate. The substrate regeneration method comprises preparing a substrate having a surface separated from an epitaxial layer. The separated surface includes a convex portion and a concave portion, and the convex portion is comparatively flatter than the concave portion. A crystalline restoration layer is grown on the separated surface. The crystalline restoration layer is grown on the convex portion. Furthermore, a surface roughness improvement layer is grown on the crystalline restoration layer, thereby providing a continuous surface. Accordingly, it is possible to provide a regenerated substrate, which has a flat surface, without using physical polishing or chemical etching technology.

Substrate regeneration method and regenerated substrate

A UV light emitting device and a method for fabricating the same are disclosed. The method includes forming a first super-lattice layer including AlGaN on a substrate, forming a sacrificial layer including AlGaN on the first super-lattice layer, partially removing the sacrificial layer, forming an epitaxial layer on the sacrificial layer, and separating the substrate from the epitaxial layer, wherein the sacrificial layer includes voids, the substrate is separated from the epitaxial layer at the sacrificial layer, and forming an epitaxial layer includes forming an n-type semiconductor layer including n-type AlGaN (0&#x3c;u&#x2266;z&#x2266;x&#x3c;1). With this structure, the light emitting device can emit UV light and be separated from the substrate.

Ultraviolet light emitting device separated from growth substrate and method of fabricating the same

Disclosed herein is an ultraviolet (UV) light emitting device. The light emitting device includes an n-type contact layer including a GaN layer; a p-type contact layer including a GaN layer; and an active layer of a multi-quantum well structure disposed between the n-type contact layer and the p-type contact layer, the active area configured to emit near ultraviolet light at wavelengths of 365 nm to 309 nm.

Growing community of inventors

Ansan-si, South Korea

A Ram Cha Lee