Luckshitha Suriyasena Liyanage

Title: Innovations of Luckshitha Suriyasena Liyanage

Introduction

Luckshitha Suriyasena Liyanage is an accomplished inventor based in Stanford, CA. He has made significant contributions to the field of semiconductor technology, particularly in memory devices. His innovative work has led to the development of a unique patent that enhances memory performance.

Latest Patents

Liyanage holds a patent for a "Three-dimensional memory device having epitaxial germanium-containing vertical channel and method of making thereof." This invention involves forming an alternating stack of insulating layers and spacer material layers over a semiconductor substrate. Memory openings are created through this stack, and a silicon-containing epitaxial pedestal along with a memory film is formed in each opening. The process includes forming a germanium-containing semiconductor layer and a dielectric layer, followed by a liquid phase epitaxy anneal to convert the layer into a single crystalline germanium-containing epitaxial channel layer. This innovation provides higher charge carrier mobility compared to traditional polysilicon channels.

Career Highlights

Liyanage is currently employed at SanDisk Technologies Inc., where he continues to push the boundaries of memory technology. His work has been instrumental in advancing the capabilities of memory devices, making them more efficient and effective.

Collaborations

Some of his notable coworkers include Marika Gunji-Yoneoka and Atsushi Suyama. Their collaborative efforts contribute to the innovative environment at SanDisk Technologies Inc.

Conclusion

Luckshitha Suriyasena Liyanage is a prominent figure in the field of semiconductor technology, with a focus on enhancing memory devices. His patent reflects his commitment to innovation and excellence in this critical area of technology.