Louis Huang

Title: The Innovative Mind of Louis Huang

Introduction

Louis Huang, an inventive engineer based in San Jose, California, has made significant contributions to the field of semiconductor technology. With one notable patent to his name, Huang is recognized for his work that helps enhance the efficiency and reliability of memory cells in modern computing.

Latest Patents

Huang's patent, titled "Memory cell with reduced soft error rate," addresses the challenges associated with soft errors in SRAM memory cells. His innovative design includes a unique configuration of NMOS and PMOS transistors that work collaboratively to minimize data loss due to transient faults. By integrating resistors strategically within the design, Huang's invention ensures that valuable real estate on the semiconductor substrate is preserved, thus allowing for smaller and more efficient memory cell sizes.

Career Highlights

Louis Huang is currently employed at Integrated Device Technology, Inc., a company that focuses on providing innovative solutions in the realm of semiconductor products. His role within the organization has positioned him as a key contributor to advancements in memory technology, where his expertise continues to be utilized in developing cutting-edge products that meet modern computing demands.

Collaborations

Throughout his career, Huang has collaborated with accomplished peers such as Shih-Ked Lee and Chuen-Der Lien. Working alongside such talented individuals has fostered an environment of innovation and creativity, enabling Huang to enhance his contributions to the field of semiconductor technology.

Conclusion

Louis Huang stands out as a notable inventor within the fast-paced industry of semiconductors. His patent, focusing on reducing the soft error rate in SRAM memory cells, showcases his innovative approach to solving complex engineering problems. As technology continues to evolve, the contributions of inventors like Huang play a critical role in shaping the future of computing.