Hsin-Huei Chen

Title: Innovations of Hsin-Huei Chen in Memory Technology

Introduction

Hsin-Huei Chen is a notable inventor based in Miaoli County, Taiwan. He has made significant contributions to the field of memory technology, holding a total of 3 patents. His work focuses on advancements in memory cell design and manufacturing methods.

Latest Patents

One of his latest patents is titled "Memory cell having a recessed gate and manufacturing method thereof." This invention describes a memory cell that includes a semiconductor substrate, shallow trench isolation, an active region, a gate electrode, a halogen-doped dielectric layer, and at least one capacitor. The design features a gate trench formed in the semiconductor substrate, which enhances the performance of the memory cell.

Another significant patent is "Vertical PMOS field effect transistor and manufacturing method thereof." This invention outlines a PMOS field effect transistor that consists of a substrate, a first nitride layer, a mesa structure, two gate oxide films, a gate stack layer, and a second nitride layer. The innovative structure of the mesa and the use of strained Si-Ge layers contribute to improved transistor performance.

Career Highlights

Hsin-Huei Chen is currently employed at Inotera Memories, Inc., where he continues to develop cutting-edge memory technologies. His expertise in semiconductor design has positioned him as a key player in the industry.

Collaborations

He has collaborated with several talented individuals, including Chung-Yuan Lee and Chien-Chi Lee, who have contributed to his research and development efforts.

Conclusion

Hsin-Huei Chen's innovative work in memory technology has led to significant advancements in the field. His patents reflect a commitment to improving semiconductor performance and efficiency.