Gurkan Ilicali

Title: Gurkan Ilicali: Innovator in Semiconductor Technology

Introduction

Gurkan Ilicali is a notable inventor based in Munich, Germany. He has made significant contributions to the field of semiconductor technology, particularly through his innovative patent. His work is recognized for its potential impact on the development of advanced electronic devices.

Latest Patents

Gurkan Ilicali holds a patent for a "Process for producing a layer arrangement, and layer arrangement for use as a dual gate field-effect transistor." This invention involves a complex process where a porous silicon layer is formed as a sacrificial layer on an auxiliary substrate. The process includes the formation of various semiconductor and insulating layers, followed by the creation of a trench and the formation of an electrically conductive structure. This innovative approach enhances the functionality and efficiency of dual gate field-effect transistors.

Career Highlights

Gurkan Ilicali is associated with Infineon Technologies AG, a leading company in semiconductor solutions. His work at Infineon has positioned him as a key player in advancing semiconductor technologies. His patent reflects his expertise and commitment to innovation in this critical field.

Collaborations

Gurkan has collaborated with esteemed colleagues such as Richard Johannes Luyken and Wolfgang Roesner. These collaborations have further enriched his work and contributed to the development of cutting-edge technologies in the semiconductor industry.

Conclusion

Gurkan Ilicali's contributions to semiconductor technology through his innovative patent demonstrate his expertise and dedication to advancing the field. His work at Infineon Technologies AG and collaborations with other professionals highlight the importance of teamwork in driving innovation.