{"id":3752,"date":"2023-07-23T18:04:44","date_gmt":"2023-07-23T18:04:44","guid":{"rendered":"https:\/\/idiyas.com\/blog\/?p=3752"},"modified":"2023-07-23T18:08:05","modified_gmt":"2023-07-23T18:08:05","slug":"most-cited-patents","status":"publish","type":"post","link":"https:\/\/idiyas.com\/blog\/most-cited-patents\/","title":{"rendered":"Most Cited Patents"},"content":{"rendered":"
<\/div>\n

We are introducing the most cited patents. A patent forward citation is a valuable metric used to assess the impact and significance of a patent. It represents the number of times other patents have cited the original patent as a reference or source of information. By analyzing the number and nature of forward citations, one can gain a better understanding of the patent’s relevance and the broader impact it has had on subsequent innovations.<\/p>\n\n\n\n

This metric came from analyzing utility patent data between January 1, 2002, and July 18, 2023.<\/p>\n\n\n\n

\n
\n
\"image<\/a>
a cross-sectional view describing a manufacturing step of a semiconductor device relating to the present invention.<\/figcaption><\/figure>\n\n\n\n
\"image<\/a>
an electronic appliance relating to the present invention.<\/figcaption><\/figure>\n<\/div>\n\n\n\n
\n
3,852 citations – Semiconductor device and manufacturing method thereof<\/a>.<\/h6>\n\n\n\n
Field of the Invention: <\/strong>Invention relates to a semiconductor using an oxide semiconductor. It also links to an electronic appliance equipped with a semiconductor device.<\/h6>\n\n\n\n
Date of patent:<\/strong> Mar. 09, 2010<\/strong><\/h6>\n\n\n\n

Inventors: Kengo Akimoto<\/strong><\/a>, Tatsuya Honda<\/strong><\/a>, Norihito Sone<\/strong><\/a>.<\/p>\n\n\n\n

This invention provides a cost-effective semiconductor device with a simplified manufacturing process. It involves forming a thin-film transistor using an oxide semiconductor film, specifically zinc oxide. The manufacturing method includes forming a gate electrode, a gate-insulating film, and an oxide semiconductor film over a substrate. Additionally, a first conductive film and a second conductive film are formed over the oxide semiconductor film. Notably, the oxide semiconductor film contains a crystallized region within the channel region of the device.<\/p>\n<\/div>\n<\/div>\n\n\n\n

\n\n\n\n
\n
\n
\"image<\/a><\/figure>\n\n\n\n
\"image<\/a>
a graph of an out-of-plane XRD pattern of a homologous single-crystal thin film shows the crystallinity.<\/figcaption><\/figure>\n<\/div>\n\n\n\n
\n
3,637 citations – Natural-superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film.<\/a><\/h6>\n\n\n\n
Date of patent:<\/strong> Jun. 13, 2006<\/strong><\/h6>\n\n\n\n

Inventors: Hideo Hosono<\/strong><\/a>, Hiromichi Ota<\/strong><\/a>, Masahiro Orita<\/strong><\/a>, Kazushige Ueda<\/strong><\/a>, Masahiro Hirano<\/strong><\/a>, Toshio Kamiya<\/strong><\/a>.<\/p>\n\n\n\n

The invention is a thin film with a natural-superlattice homologous single-crystal structure. It comprises a complex oxide grown on a ZnO epitaxial thin film or a ZnO single crystal on a single-crystal substrate. The complex oxide, MMO(ZnO), consists of selected elements like Ga, Fe, Sc, In, Lu, Yb, Tm, Er, Ho, and Y, along with Mn, Fe, Ga, In, and Al. This thin film has applications in electronic devices and X-ray optics, achieved by depositing the complex oxide and applying a thermal anneal treatment.<\/p>\n<\/div>\n<\/div>\n\n\n\n\n\n\n\n

\n
\n
\"image<\/a>
a cross-sectional view of a semiconductor device relating to the present invention.<\/figcaption><\/figure>\n\n\n\n
\"image<\/a><\/figure>\n<\/div>\n\n\n\n
\n
3,634 citations – Semiconductor device and manufacturing method thereof<\/a>.<\/h6>\n\n\n\n

Date of patent:<\/strong> Jun. 08, 2010<\/strong><\/p>\n\n\n\n

Inventors: Kengo Akimoto<\/strong><\/a>, Tatsuya Honda<\/strong><\/a>, Norihito Sone<\/strong><\/a>.<\/p>\n\n\n\n

The goal is to create a cost-effective semiconductor device using a simplified manufacturing process. This involves forming a thin film transistor with an oxide semiconductor film (such as zinc oxide). The steps include forming a gate electrode, a gate-insulating film, and an oxide semiconductor film on a substrate. Finally, the first and second conductive films are applied over the oxide semiconductor film. The oxide semiconductor film contains a crystallized region in the channel area.<\/p>\n<\/div>\n<\/div>\n\n\n\n

\n\n\n\n
\n
\n
\"image<\/a>
illustrates an embodiment of an active matrix display area.<\/figcaption><\/figure>\n<\/div>\n\n\n\n
\n
3,61<\/strong>9 citations – Semiconductor device.<\/a><\/h6>\n\n\n\n
Date of Patent:<\/strong> Nov. 20, 2007<\/strong><\/h6>\n\n\n\n

Inventors: Randy L. Hoffman<\/strong><\/a>, Gregory S. Herman<\/strong><\/a>, Peter P. Mardilovich<\/strong>.<\/a><\/p>\n\n\n\n

The semiconductor device includes a channel made of a metal oxide, which can be zinc-gallium, cadmium-gallium, or cadmium-indium.<\/p>\n<\/div>\n<\/div>\n\n\n\n\n\n\n\n

\n
\n
\"image<\/a><\/figure>\n<\/div>\n\n\n\n
\n
3,591 citations – Combined binary oxide semiconductor device.<\/a><\/h6>\n\n\n\n
Date of Patent:<\/strong> Oct<\/strong>. 16, 2007<\/strong><\/h6>\n\n\n\n

Inventors: Randy L. Hoffman<\/strong><\/a>, Gregory S. Herman<\/strong><\/a>, Peter P. Mardilovich<\/strong>.<\/a><\/p>\n\n\n\n

The exemplary embodiments of the present disclosure include semiconductor devices, such as transistors, that contain multicomponent oxide semiconductors. A semiconductor device can include a channel including a first binary oxide and a second binary oxide. <\/p>\n<\/div>\n<\/div>\n\n\n\n

\n\n\n\n
\n
\n
\"image<\/a><\/figure>\n\n\n\n
\"image<\/a>
a section view and a circuit diagram of a semiconductor device to which a FET according to the present invention is applied for driving a light emission device.<\/figcaption><\/figure>\n<\/div>\n\n\n\n
\n
3,580 citations – Transistor and semiconductor devices.<\/a><\/h6>\n\n\n\n
Date of Patent:<\/strong> Jun. 20, 2006<\/strong><\/h6>\n\n\n\n

Inventors: Masashi Kawasaki<\/strong><\/a>, Hideo Ohno<\/strong>.<\/a><\/p>\n\n\n\n

In an npn-type transistor, the emitter and collector are made of n-type transparent semiconductor material, and the base is made of p-type transparent semiconductor material. The base electrode, emitter electrode, and collector electrode are formed in their respective regions. The n-type transparent semiconductor can be doped ZnO with group III or group VII elements, while the p-type transparent semiconductor can be doped ZnO with group I or group V elements.<\/p>\n<\/div>\n<\/div>\n\n\n\n\n\n\n\n

\n
\n
\"image<\/a>
a characteristic view of a transistor of the present invention.<\/figcaption><\/figure>\n<\/div>\n\n\n\n
\n
3,579 citations – Transistor and semiconductor device.<\/a><\/h6>\n\n\n\n
Date of Patent:<\/strong> Apr. 27, 2004<\/strong><\/h6>\n\n\n\n

Inventors: Masashi Kawasaki<\/strong><\/a>, Hideo Ohno<\/strong>.<\/a><\/p>\n\n\n\n

The transistor has a transparent channel layer made of zinc oxide or a similar transparent semiconductor. Transparent electrodes, which can be entirely or partially transparent, are used for the source, drain, and gate. These transparent electrodes are made of conductive materials like group III-doped ZnO. The gate insulating layer is a transparent insulating material, such as group V-doped ZnO. Transparent substrates like glass, sapphire, or plastic can be used if transparency is needed.<\/p>\n<\/div>\n<\/div>\n\n\n\n

\n\n\n\n
\n
\n
\"image<\/a>
a sectional view showing a structure of a thin film transistor.<\/figcaption><\/figure>\n\n\n\n
\"image<\/a>
a graphic showing a Vg-Id characteristic of an example of the thin film transistor.<\/figcaption><\/figure>\n<\/div>\n\n\n\n
\n
3,575 citations –<\/strong> Thin film transistor and matrix display device<\/a>.<\/h6>\n\n\n\n
Date of Patent:<\/strong> May. 13, 2003<\/strong><\/h6>\n\n\n\n

Inventors: Masashi Kawasaki<\/strong><\/a>, Hideo Ohno<\/strong><\/a>, Kazuki Kobayashi<\/strong><\/a>, Ikuo Sakono<\/strong><\/a>.<\/p>\n\n\n\n

In a thin film transistor, a gate-insulating film is formed with a first insulating film (SiN) and a second insulating film (SiO). The semiconductor layer, including ZnO, is then formed on the second insulating film. This structure enhances crystalline characteristics and reduces interface defects. The oxide-based second insulating film prevents oxygen depletion from the semiconductor layer, maintaining favourable crystalline characteristics near the interface. This improves the TFT characteristics, resulting in low leakage current, high mobility, and favourable switching behaviour in the transparent semiconductor-based thin film transistor.<\/p>\n<\/div>\n<\/div>\n\n\n\n\n\n\n\n

\n
\n
\"image<\/a>
a graph showing an out-of-plane XRD pattern representing the crystallinity of a single-crystal LnCuOXX solid-solution thin film produced.<\/figcaption><\/figure>\n\n\n\n
\"image<\/a>
a graph showing an out-of-plane XRD pattern representing the crystallinity of a LnCuOX film produced.<\/figcaption><\/figure>\n<\/div>\n\n\n\n
\n
3,566 citations – LnCuO(S, Se, Te)monocrystalline thin film, its manufacturing method, and optical device or electronic device using the monocrystalline thin film.<\/a><\/h6>\n\n\n\n
Date of Patent:<\/strong> Jan. 29, 2008<\/strong><\/h6>\n\n\n\n

Inventors: Hideo Hosono<\/strong><\/a>, Masahiro Hirano<\/strong><\/a>, Hiromichi Ota<\/strong><\/a>, Masahiro Orita<\/strong><\/a>, Hidenori Hiramatsu<\/strong><\/a>, Kazushige Ueda<\/strong>.<\/a><\/p>\n\n\n\n

The disclosed method involves producing a high-quality LnCuOX single-crystal thin film. It includes growing a base thin film on a single-crystal substrate, depositing an amorphous or polycrystalline LnCuOX thin film on top to form a laminated film, and annealing the laminated film at a temperature of 500\u00b0C or higher. This method enables the growth of a thin film with excellent crystallinity suitable for use in light-emitting diodes, semiconductor lasers, field-effect transistors, and hetero-bipolar transistors, surpassing the limitations of conventional polycrystalline films.<\/p>\n<\/div>\n<\/div>\n\n\n\n

\n\n\n\n
\n
\n
\"image<\/a>
shows schematically a cross-sectional of indium oxide-based TFT according to this invention with a top gate electrode configuration and with intermediate electrodes. <\/figcaption><\/figure>\n\n\n\n
\"image<\/a>
shows a simplified schematic diagram of a two-dimensional display or imaging array.<\/figcaption><\/figure>\n<\/div>\n\n\n\n
\n
3,563 citations – Indium oxide-based thin film transistors and circuits.<\/a><\/h6>\n\n\n\n
Date of Patent:<\/strong> May. 01, 2007<\/strong><\/h6>\n\n\n\n

Inventors: Yi-Chi Shih<\/strong><\/a>, Cindy Xing Qiu<\/strong><\/a>, Ishiang Shih<\/strong><\/a>, Chunong Qiu<\/strong><\/a><\/p>\n\n\n\n

This invention relates to thin film transistors and circuits with indium oxide-based channel layers. These components can be fabricated at low temperatures on various substrates, including flexible and transparent ones. They offer high charge carrier mobilities, making them suitable for electronic display and imaging applications. The invention also provides methods for fabricating these thin film transistors with indium oxide-based channels.<\/p>\n<\/div>\n<\/div>\n\n\n\n\n\n\n\n

\n
\n
\"image<\/a>
illustrates a cross-sectional view of a typical thin film transistor having a top-gate\/top-contact structure.<\/figcaption><\/figure>\n<\/div>\n\n\n\n
\n
3,562 citations – Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby.<\/a><\/h6>\n\n\n\n
Date of Patent:<\/strong> Jul. 22, 2008<\/strong><\/h6>\n\n\n\n

Inventors: David H. Levy<\/strong><\/a>, Andrea C. Scuderi<\/strong><\/a>, Lyn M. Irving<\/strong>.<\/a><\/p>\n\n\n\n

A thin film transistor is made with a zinc-oxide-containing semiconductor material and can include two electrodes. The process for fabricating this transistor device involves keeping the substrate temperature below 300\u00b0C during fabrication.<\/p>\n<\/div>\n<\/div>\n\n\n\n

\n\n\n\n
\n
\n
\"image<\/a>
a top-plan view of the thin-film transistor according to an example embodiment.<\/figcaption><\/figure>\n<\/div>\n\n\n\n
\n
3,560 citations – Transistor using an isovalent semiconductor oxide as the active channel layer.<\/a><\/h6>\n\n\n\n
Date of Patent:<\/strong> Dec. 09, 2008<\/strong><\/h6>\n\n\n\n

Inventors: Randy L. Hoffman<\/strong><\/a>, Gregory S. Herman<\/strong>.<\/a><\/p>\n\n\n\n

A semiconductor device can include a channel including an oxide comprising a combination of isovalent cations selected from within the D block and the P block of the Periodic Table.<\/p>\n<\/div>\n<\/div>\n\n\n\n\n\n\n\n

\n
\n
\"image<\/a>
a cross-sectional view of a structure of a thin-film transistor according to the present invention.<\/figcaption><\/figure>\n<\/div>\n\n\n\n
\n
3,551 citations – Thin-film transistor and thin-film diode having amorphous-oxide semiconductor layer.<\/a><\/h6>\n\n\n\n
Date of Patent:<\/strong> Nov. 18, 2008<\/strong><\/h6>\n\n\n\n

Inventors: Tatsuya Iwasaki<\/strong><\/p>\n\n\n\n

A thin-film transistor consists of an oxide semiconductor channel layer that is transparent to visible light and has a refractive index of nx. There’s a gate-insulating layer on one side of the channel layer and a transparent layer with a refractive index of nt on the other side. In this design, nx is greater than nt.<\/p>\n<\/div>\n<\/div>\n\n\n\n

A thin-film transistor includes a substrate with a refractive index of no. On top of the substrate, there’s a transparent layer with a refractive index of nt, and then a channel layer with a refractive index of nx. In this case, the relationship is nx>nt>no.<\/p>\n\n\n\n

\n\n\n\n
\n
\n
\"image<\/a>
schematic view illustrating a method for manufacturing a field-effect transistor according to an embodiment of the present invention.<\/figcaption><\/figure>\n<\/div>\n\n\n\n
\n
3,551 citations – Field-effect transistor and method for manufacturing the same.<\/a><\/h6>\n\n\n\n
Date of Patent:<\/strong> Aug. 12, 2008<\/strong><\/h6>\n\n\n\n

Inventors: Ayanori Endo<\/strong><\/a>, Ryo Hayashi<\/strong><\/a>, Tatsuya Iwasaki<\/strong>.<\/a><\/p>\n\n\n\n

Method for manufacturing a field-effect transistor:<\/p>\n\n\n\n

    \n
  1. Form source and drain electrodes containing hydrogen\/deuterium.<\/li>\n\n\n\n
  2. Create an oxide semiconductor layer with decreased electrical resistance by adding hydrogen\/deuterium.<\/li>\n\n\n\n
  3. Allow hydrogen\/deuterium diffusion from electrodes to the oxide semiconductor layer.<\/li>\n<\/ol>\n<\/div>\n<\/div>\n\n\n\n\n\n\n\n
    \n
    \n
    \"image<\/a>
    a schematic diagram of a top-gate thin-film transistor for illustrating a method for fabricating an oxide-semiconductor device according to a First Embodiment. <\/figcaption><\/figure>\n<\/div>\n\n\n\n
    \n
    3,549 citations – Method of fabricating oxide semiconductor device.<\/a><\/h6>\n\n\n\n
    Date of Patent:<\/strong> Dec. 23, 2008<\/strong><\/h6>\n\n\n\n

    Inventors: Nobuyuki Kaji<\/strong><\/a>, Hisato Yabuta<\/strong><\/a><\/p>\n\n\n\n

    The method for fabricating a device using an oxide semiconductor involves two main steps. First, the oxide semiconductor is formed on a substrate. Then, the conductivity of the oxide semiconductor is altered by irradiating a specific region with an energy ray.<\/p>\n<\/div>\n<\/div>\n\n\n\n

    \n\n\n\n
    \n
    \n
    \"image<\/a>
    a characteristics diagram showing the relation between the electric conductivity of a ZnO film and the flow rate ratio of the oxygen gas.<\/figcaption><\/figure>\n<\/div>\n\n\n\n
    \n
    3,543 citations – Method for forming ZnO film, a method for forming ZnO semiconductor layer, a method for fabricating a semiconductor device, and a semiconductor device.<\/a><\/h6>\n\n\n\n
    Date of Patent:<\/strong> May. 23, 2006<\/strong><\/h6>\n\n\n\n

    Inventors: Katsutoshi Takeda<\/strong><\/a>, Masao Isomura<\/strong><\/a><\/p>\n\n\n\n

    On a substrate, a ZnO buffer layer is formed either with low electrical conductivity (\u2264 1×10-9<\/sup> S\/cm) or with a different crystal face diffraction peak than (002) and (004) in X-ray diffraction, achieved through sputtering. On top of the ZnO buffer layer, a ZnO semiconductor layer is formed. The semiconductor layer is created with a lower flow rate of oxygen gas in the sputtering process compared to the ZnO buffer layer formation.<\/p>\n<\/div>\n<\/div>\n\n\n\n\n\n\n\n

    \n
    \n
    \"image<\/a>
    a schematic structural view of a TFT produced for evaluating an amorphous oxide semiconductor used for an optical sensor of the present invention.<\/figcaption><\/figure>\n<\/div>\n\n\n\n
    \n
    3,541 citations – Sensor and image pickup device.<\/a><\/h6>\n\n\n\n
    Date of Patent:<\/strong> Nov. 18, 2008<\/strong><\/h6>\n\n\n\n

    Inventors: Keishi Saito<\/strong><\/a>, Hideo Hosono<\/strong><\/a>, Toshio Kamiya<\/strong><\/a>, Kenji Nomura<\/strong>.<\/a><\/p>\n\n\n\n

    A sensor for detecting a received electromagnetic wave comprising a first electrode, a second electrode and an amorphous oxide layer interposed between the first electrode and the second electrode.<\/p>\n<\/div>\n<\/div>\n\n\n\n

    \n\n\n\n
    \n
    \n
    \"image<\/a><\/figure>\n<\/div>\n\n\n\n
    \n
    3,539 citations – High-electron mobility transistor with zinc oxide.<\/a><\/h6>\n\n\n\n
    Date of Patent:<\/strong> Sep. 12, 2006<\/strong><\/h6>\n\n\n\n

    Inventors: Jeff Nause<\/strong><\/a>, Shanthi Ganesan<\/strong>.<\/a><\/p>\n\n\n\n

    A zinc oxide (ZnO) FET uses a gate-insulating layer (aluminum nitride\/aluminum gallium nitride or magnesium zinc oxide) to achieve high input amplitude. It operates in enhancement mode, like a silicon MOSFET, forming an inversion layer. The excellent insulation characteristics of the gate insulating layer increase the Schottky barrier, enabling the large input amplitude.<\/p>\n<\/div>\n<\/div>\n\n\n\n\n\n\n\n

    \n
    \n
    \"image<\/a>
    a cross-sectional view cut along a substantially central line in a channel width direction of the thin film transistor. <\/figcaption><\/figure>\n<\/div>\n\n\n\n
    \n
    3,538 citations – Thin film transistor having an etching protection film and manufacturing method thereof.<\/a><\/h6>\n\n\n\n
    Date of Patent:<\/strong> Jun. 10, 2008<\/strong><\/h6>\n\n\n\n

    Inventors: Hiromitsu Ishii<\/strong><\/a>, Hitoshi Hokari<\/strong><\/a>, Motohiko Yoshida<\/strong><\/a>, Ikuhiro Yamaguchi<\/strong>.<\/a><\/p>\n\n\n\n

    The thin-film transistor includes a semiconductor thin film, a gate-insulating film, and a gate electrode on one surface of the semiconductor thin film. It also has a source electrode and a drain electrode connected to the semiconductor thin film. The transistor features an insulating film around the source and drain regions, with contact holes exposing parts of these regions. The source and drain electrodes connect to the semiconductor thin film through these contact holes.<\/p>\n<\/div>\n<\/div>\n\n\n\n

    \n\n\n\n
    \n
    \n
    \"Most<\/a>
    a schematic sectional view of a first preferred embodiment of a semiconductor device according to the present invention.<\/figcaption><\/figure>\n<\/div>\n\n\n\n
    \n
    3,526 citations – Semiconductor device in which zinc oxide is used as a semiconductor material and method for manufacturing the semiconductor device.<\/a><\/h6>\n\n\n\n
    Date of Patent:<\/strong> Mar. 10, 2009<\/strong><\/h6>\n\n\n\n

    Inventors: Yoshihiro Ito<\/strong><\/a>, Michio Kadota<\/strong><\/a><\/p>\n\n\n\n

    The thin-film transistor includes a semiconductor thin film, a gate-insulating film, and a gate electrode on one surface of the semiconductor thin film. It also has a source electrode and a drain electrode connected to the semiconductor thin film. The transistor features an insulating film around the source and drain regions, with contact holes exposing parts of these regions. The source and drain electrodes connect to the semiconductor thin film through these contact holes.<\/p>\n<\/div>\n<\/div>\n","protected":false},"excerpt":{"rendered":"

    We are introducing the most cited patents. A patent forward citation is a valuable metric used to assess the impact and significance of a patent. It represents the number of times other patents have cited the original patent as a reference or source of information. By analyzing the number and nature of forward citations, one […]<\/p>\n","protected":false},"author":6,"featured_media":3958,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"om_disable_all_campaigns":false,"_uf_show_specific_survey":0,"_uf_disable_surveys":false,"footnotes":""},"categories":[46,4,12],"tags":[928,935,933,931,927,923,916,925,917,945,938,946,49,948,932,943,940,919,941,913,942,929,920,918,939,926,949,947,937,915,737,17,924,922,936,944,914,934,921,15,930,950],"class_list":["post-3752","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-inventions","category-inventors","category-patents","tag-andrea-c-scuderi","tag-ayanori-endo","tag-chunong-qiu","tag-cindy-xing-qiu","tag-david-h-levy","tag-gregory-s-herman","tag-hideo-hosono","tag-hideo-ohno","tag-hiromichi-ota","tag-hiromitsu-ishii","tag-hisato-yabuta","tag-hitoshi-hokari","tag-idiyas","tag-ikuhiro-yamaguchi","tag-ishiang-shih","tag-jeff-nause","tag-katsutoshi-takeda","tag-kazushige-ueda","tag-keishi-saito","tag-kengo-akimoto","tag-kenji-nomura","tag-lyn-m-irving","tag-masahiro-hirano","tag-masahiro-orita","tag-masao-isomura","tag-masashi-kawasaki","tag-michio-kadota","tag-motohiko-yoshida","tag-nobuyuki-kaji","tag-norihito-sone","tag-patent-forward-citation","tag-patents","tag-peter-p-mardilovich","tag-randy-l-hoffman","tag-ryo-hayashi","tag-shanthi-ganesan","tag-tatsuya-honda","tag-tatsuya-iwasaki","tag-toshio-kamiya","tag-uspto","tag-yi-chi-shih","tag-yoshihiro-ito"],"aioseo_notices":[],"aioseo_head":"\n\t\t\n\t\n\t\n\t\n\t\n\t\n\t\n\t\t\n\t\t\n\t\t\n\t\t\n\t\t\n\t\t\n\t\t\n\t\t\n\t\t\n\t\t\n\t\t\n\t\t\n\t\t\n\t\t\n\t\t\n\t\t\n\t\t\n\t\t\n\t\t\n\t\t\n\t\t\n\t\t\n\t\t\n\t\t\n\t\t\n\t\t\n\t\t\n\t\t\n\t\t\n\t\t\n\t\t\n\t\t\n\t\t\n\t\t\n\t\t\n\t\t\n\t\t\n\t\t\n\t\t\n\t\t\n\t\t\n\t\t\n\t\t\n\t\t\n\t\t\n\t\t\n\t\t\n\t\t\n\t\t\n\t\t\n\t\t\n\t\t\n\t\t\n\t\t\n\t\t\n\t\t\n\t\t\n\t\t