Most Cited Patents
3,549 citations – Method of fabricating oxide semiconductor device.
Date of Patent: Dec. 23, 2008
Inventors: Nobuyuki Kaji, Hisato Yabuta
The method for fabricating a device using an oxide semiconductor involves two main steps. First, the oxide semiconductor is formed on a substrate. Then, the conductivity of the oxide semiconductor is altered by irradiating a specific region with an energy ray.
3,543 citations – Method for forming ZnO film, a method for forming ZnO semiconductor layer, a method for fabricating a semiconductor device, and a semiconductor device.
Date of Patent: May. 23, 2006
Inventors: Katsutoshi Takeda, Masao Isomura
On a substrate, a ZnO buffer layer is formed either with low electrical conductivity (≤ 1×10-9 S/cm) or with a different crystal face diffraction peak than (002) and (004) in X-ray diffraction, achieved through sputtering. On top of the ZnO buffer layer, a ZnO semiconductor layer is formed. The semiconductor layer is created with a lower flow rate of oxygen gas in the sputtering process compared to the ZnO buffer layer formation.
Prolific Inventors in Germany
Famous Inventors Born in October
March 28, 2023, Weekly Utility Patent Insights
About The Author
Angelina Kushnarova
Angelina Kushnarova (Sverediuk) was born in Ukraine. She graduated from Ternopil Medical University with a specialization in Medicine and completed an internship in Radiology at Lviv University. She worked as a Radiologist, while also working as a web developer.